20v-100v 3.0a surface mount schottky barrier rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 1 of 2 ss32 thru ss310 f eatures for surface mounted application metal to silicon rectifier, majority carrier conduction low forward voltage drop easy pick and place high surge current capability plastic material used carriers underwriters laboratory classification 94v-0 epitaxial construction high temperature soldering: 260 o c / 10 seconds at terminals absolute maximum ratings* t a = 25c unless otherwise noted symbol parameter value units i o average rectified current @ t a = 75 c 3.0 a i f(surge) peak forward surge current 8.3 ms single half-sine-wave superimposed on rated load (jedec method) 100 a p d total device dissipation derate above 25 c 2.27 18 w mw/ c r ja thermal resistance, junction to ambient** 55 c/w r jc thermal resistance, junction to case 17 c/w t stg storage temperature range -55 to +150 c t j operating junction temperature -55 to +150 c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. device mounted on fr-4 pcb 0.55 x 0.55" (14 x 14 mm). electrical characteristics t a = 25c unless otherwise noted parameter device units 32 33 34 35 36 38 39 310 peak repetitive reverse voltage 20 30 40 50 60 80 90 100 v maximum rms voltage 1421283542566370 v dc reverse voltage (rated v r ) 20 30 40 50 60 80 90 100 v maximum reverse current t a = 25 c 0.5 ma @ rated v r t a = 100 c 20 10 ma maximum forward voltage @ 3.0 a 500 750 850 mv
surface mount schottky barrier rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 20v-100v 3.0a 2 of 2 ss32 thru ss310 fig.2- maximum non-repetitive peak forward surge current peak for ward surge current . (a) 1 10 100 50 70 90 130 110 150 number of cycles at 60hz at rated tl 8.3ms single half sine wave jedec method fig.1- maximum forward current derating curve average for ward current . (a) 50 60 70 80 90 100 110 120 160 150 140 130 0 1 2 3 lead temperature. ( c) o resistive or inductive load ss32-ss34 ss35-ss310 pcb mounted on 0.6x0.6" (16x16mm) copper pad areas tj=150 c 0 fig.3- typical forward characteristics instantaneous for ward current . (a) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 40 forward voltage. (v) tj=125 c 0 tj=25 c 0 pulse width=300 s 1% duty cycle ss32-ss34 ss35-ss36 SS39-ss310 fig.4- typical reverse characteristics instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 20 percent of rated peak reverse voltage. (%) tj=125 c 0 tj=25 c 0 tj=75 c 0 ss32-ss34 ss35-ss310 fig.6- typical transient termal impdance transcient thermal impedance, o c / w 1 0.01 0.1 10 100 0.1 10 1 100 t, pulse duration, (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1 10 100 10 100 1000 reverse voltage. (v) ss32-ss34 ss35-ss36 SS39-ss310 tj=25 c f=1.0mhz vsig=50mvp-p 0
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